Advanced crack stop structure

ABSTRACT

An integrated circuit (IC) structure includes an active area of the IC structure insulator positioned over a substrate. The active area includes an interconnection structure comprised of a plurality of levels, each of the interconnect structure levels including an interlayer dielectric (ILD) layer, a barrier layer disposed over the ILD and a conductor metal layer over the barrier layer. The IC structure also includes a crack stop area which includes a crack stop structure having an equal plurality of levels as the interconnect structure. Each of the crack stop structure levels includes at least one of the layers of the interconnection structure at a same level. At least one crack stop structure level also includes a high modulus layer unique to the crack stop structure level as compared to the corresponding interconnect structure level. In another aspect of the invention, a method for producing the structure is described.

BACKGROUND OF THE INVENTION

This disclosure relates to integrated circuit devices, and morespecifically, to a method and structure to create crack stop structuresin semiconductor devices.

When a semiconductor wafer is diced into individual integrated circuitchips, cracks can form in the dicing region of the wafer. To prevent thecrack from propagating from the dicing region into the active region ofthe chip, “crack stopper” or “crack stop” structures have been adoptedby the industry to withstand the stresses resulting from the chip dicingoperation during manufacturing. In the prior art, a crack stop structurecomprised of a metal stack is built in a peripheral region surroundingactive chip area, that is, the metal and dielectric interconnect levelswhich electrically connect the devices built deeper in the substrate.

With the adoption of low-k dielectrics, the effectiveness of the crackstop structures in stopping cracking proliferation has been reduced dueto the brittleness of the low-k dielectrics as compared with theconventional dielectric materials. In addition to the problems caused bythe low-k dielectrics, the stress level during the dicing operation isincreasing in advanced chip designs due to a variety of factors such asincreased chip size, organic laminate design, and the introduction oflead free solder metallurgies.

Thus, producing improved crack stop structures that can resist cracksdriven by dicing induced stresses has become a critical issue for theindustry. The present disclosure presents an advanced crack stopstructure to alleviate this problem.

BRIEF SUMMARY

According to this disclosure, an advanced crack stop structure and amethod for constructing the structure are described. In one aspect ofthe invention, an integrated circuit (IC) structure includes an activearea of the IC structure insulator positioned over a substrate. Theactive area includes an interconnection structure comprised of aplurality of levels, each of the interconnect structure levels includingan interlayer dielectric (ILD) layer, a barrier layer disposed over theILD and a conductor metal layer over the barrier layer. The IC structurealso includes a crack stop area which includes a crack stop structurehaving an equal plurality of levels as the interconnect structure. Eachof the crack stop structure levels includes at least one of the layersof the interconnection structure at a same level. At least one crackstop structure level also includes a high modulus layer unique to thecrack stop structure level as compared to the corresponding interconnectstructure level. In another aspect of the invention, a method forproducing the structure is described.

The foregoing has outlined some of the more pertinent features of thedisclosed subject matter. These features should be construed to bemerely illustrative. Many other beneficial results can be attained byapplying the disclosed subject matter in a different manner or bymodifying the invention as will be described.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings which are notnecessarily drawing to scale, and in which:

FIG. 1 is a top view diagram depicting a chip substrate having fourchips each equipped with a crack stop structure;

FIG. 2 is a cross-sectional diagram depicting a prior art crack stopstructure together with a simplified metal interconnect structure;

FIG. 3 is a cross-sectional diagram depicting a crack stop structuretogether with a simplified metal interconnect structure according to afirst embodiment of the invention;

FIG. 4 is a cross-sectional diagram depicting a crack stop structuretogether with a simplified metal interconnect structure after an etchstep has been performed on a top insulator layer according to a firstembodiment of the invention;

FIG. 5 is a cross-sectional diagram depicting the crack stop structuretogether with a simplified metal interconnect structure after block outmask deposition and high modulus material deposition steps have beenperformed according to a first embodiment of the invention;

FIG. 6 is a cross-sectional diagram depicting the crack stop structuretogether with a simplified metal interconnect structure after a barrierlayer has been formed according to a first embodiment of the invention;

FIG. 7 is a cross-sectional diagram depicting the depicting the crackstop structure together with a simplified metal interconnect structureafter the contact metallurgy has been formed according to a firstembodiment of the invention;

FIG. 8 is a cross-sectional diagram depicting a crack stop structuretogether with a simplified metal interconnect structure according to asecond embodiment of the invention;

FIG. 9 is a cross-sectional diagram depicting a crack stop structuretogether with a simplified metal interconnect structure after an etchstep has been performed on a top insulator layer according to a thirdembodiment of the invention;

FIG. 10 is a cross-sectional diagram depicting the crack stop structuretogether with a simplified metal interconnect structure after a blockout mask deposition and high modulus material deposition steps have beenperformed according to a fourth embodiment of the invention;

FIG. 11 is a cross-sectional diagram depicting the crack stop structuretogether with a simplified metal interconnect structure after a barrierlayer has been formed according to a fourth embodiment of the invention;

FIG. 12 is a cross-sectional diagram depicting the depicting the crackstop structure together with a simplified metal interconnect structureafter the contact metallurgy has been formed according to a fourthembodiment of the invention; and

FIG. 13 is a cross-sectional diagram depicting the depicting the crackstop structure together with a simplified metal interconnect structureafter a planarization step has been performed according to a fourthembodiment of the invention.

DETAILED DESCRIPTION OF THE DRAWINGS

At a high level, embodiments of the invention provide an advanced crackstop structure in which a high modulus material is used to preventpropagation of cracks formed during the dicing of the semiconductorwafer. Embodiments of the invention use some process steps used in theformation of the interconnecting metallurgy of the active area of theintegrated circuit in the formation of the crack stop structure.

A “high modulus” or “higher modulus” material as used herein is definedwith reference to the “modulus” or strength of the dielectric layer inwhich the “high modulus” material in which it is embedded. Theproperties of a “high modulus” are according to Young's modulus which iswell defined in the art. That is, a high modulus material does notchange its shape appreciably under load. This is in contrast to thebrittle low-k dielectric used in layers of the interconnect and crackstop structures, e.g., porous SiO2 tends to be brittle and deformsirretrievably, i.e. cracks, under the load, for example, the loadinduced by the dicing operation. For the purposes of the invention, ahigh or higher modulus material is stronger under stress than thedielectric in which it is embedded.

A “substrate” as used herein can comprise any material appropriate forthe given purpose (whether now known or developed in the future) and cancomprise, for example, Si, SiC, SiGe, SiGeC, Ge alloys, GaAs, InAs, InP,other III-V or II-VI compound semiconductors, or organic semiconductorstructures. Insulators can also be used as substrates in embodiments ofthe invention.

For purposes herein, a “semiconductor” is a material or structure thatmay include an implanted impurity that allows the material to sometimesbe conductive and sometimes be a non-conductive, based on electron andhole carrier concentration. As used herein, “implantation processes” cantake any appropriate form (whether now known or developed in the future)and can comprise, for example, ion implantation.

For purposes herein, an “insulator” is a relative term that means amaterial or structure that allows substantially less (<95%) electricalcurrent to flow than does a “conductor.” The dielectrics (insulators)mentioned herein can, for example, be grown from either a dry oxygenambient or steam and then patterned. As discussed in the specification,the dielectrics are considered high dielectric constant (high-k)materials, including but not limited to hafnium oxide, aluminum oxide,silicon nitride, silicon oxynitride, a gate dielectric stack of SiO2 andSi3N4, and metal oxides like tantalum oxide that have relativedielectric constants above that of SiO2 (above 3.9). Dielectrics withlow dielectric constants, e.g., SiO2, have relative dielectric constantsof 3.8 or below. Representative low-k dielectrics have dielectricconstants equal or lower than 3.5. Example of low-k dielectrics includeporous SiO2, and carbon doped SiO2. The dielectric can be a combinationof two or more of these materials. The thickness of dielectrics hereinmay vary contingent upon the required device performance.

The conductors mentioned herein can be formed of a conductive materialsuch as one or more metals, such as copper, aluminum, tungsten, hafnium,tantalum, molybdenum, titanium, or nickel, or a metal silicide, anyalloys of such metals, and may be deposited using physical vapordeposition, chemical vapor deposition, or any other technique known inthe art.

“Electrically conductive” and/or “electrical conductor” as used throughthe present disclosure means a material typically having a roomtemperature resistivity less than about 400 μ Ω-cm. As used herein, theterms “insulator” and “dielectric” denote a material having a roomtemperature resistivity greater than about 400 μ Ω-cm.

When patterning any material herein, the material to be patterned can begrown or deposited in any known manner and a patterning layer (such asan organic photoresist aka “resist”) can be formed over the material.The patterning layer (resist) can be exposed to some form of lightradiation (e.g., patterned exposure, laser exposure) provided in a lightexposure pattern, and then the resist is developed using a chemicalagent. This process changes the characteristic of the portion of theresist that was exposed to the light. Then one portion of the resist canbe rinsed off, leaving the other portion of the resist to protect thematerial to be patterned. A material removal process is then performed(e.g., using plasma etching) to remove the unprotected portions of thematerial to be patterned. The resist is subsequently removed to leavethe underlying material patterned according to the light exposurepattern.

Embodiments will be explained below with reference to the accompanyingdrawings.

FIG. 1 is a top view diagram depicting a chip substrate having fourchips, each equipped with a crack stop structure. Although one skilledin the art will appreciate that many more chips are typically formed ina given semiconductor wafer, four chips are shown for ease inillustration. Active areas 50 of the chips are surrounded by crack stopstructures 51. The crack stop structures 51 are intended to stop cracksfrom propagating when the wafer is diced along dice lines 52.

FIG. 2 is a cross-sectional diagram depicting a prior art metal stackcrack stop structure (to the left) together with a simplified metalinterconnect structure (to the right) on a substrate 101. Although onlya pair of structures is shown for ease in illustration, the patternedinterconnection structure is usually more complicated and includes alarge plurality of vias and a plurality of metal lines at each level ofthe interconnection. Similar to the interconnection structure, the crackstop structure is comprised of a plurality of vias and metal lines.

As shown in the drawing, the crack stop structure and interconnectmetallurgy structure are disposed adjacent to each other on thesubstrate 101. The interconnect structure is used to electricallyinterconnect a plurality of semiconductor devices. For ease inillustration, the embedded devices are not shown, but could includenFETs, pFETs and isolation dielectrics built in a semiconductorsubstrate. A set of capping/etch stop layers 103, 107, 111 separate aset of inter-layer dielectric (ILD) layers 105, 109, 113. The cappingetch stop layers are made of silicon nitride (Si3N4) or silicon carbide(SiC) and the ILD layers are composed of a dielectric. The prior artmetal stack crack stop structure is comprised of a set of metal linesand/or vias 125, 129, 133 and a set of liner layers 127, 131, 135. Themetal layers 125, 129, 133 are typically copper or a copper alloy, butcan be formed from a variety of metals. The liner layers 127, 131, 135are typically a barrier layer such as titanium or tantalum or theirnitrides. For ease in construction, the crack stop structure is builtfrom a similar set of materials as the interconnecting metallurgy. Asshown, the metal layers 141, 145, 149 and barrier layers 143, 147, 151which form the interconnect are the same materials as the metal layers125, 129, 133 and barrier layers 127, 131, 135 which form the crack stopstructure.

As shown in FIG. 1, the metal stack crack stop structures shown in FIGS.2-13 surround the metallurgy which is part of the active circuit area.The problem with the prior art structure is that when a low-k dielectricsuch as porous SiO2 is used, which is brittle as compared to the densedielectric materials, the crack stop structure is ineffective and crackspropagate into the active device area. The dense dielectrics have ahigher modulus than a brittle low-k dielectric, that is, they do notdeform under the load created by the dicing operation.

FIG. 3 is a cross-sectional diagram depicting a crack stop structure (onthe left) together with a simplified metal interconnect structure (onthe right) according to a first embodiment of the invention. Theinvention introduces a set of high modulus liners 226, 232, 234 withinthe crack stop structure which is not present in the interconnectmetallurgy for the active chip area. As shown in the drawing, in thisembodiment, the metal stack crack stop structure is further comprised ofa set of metal layers 225, 229, 233 and a set of liner layers 227, 231,235. The metal layers 241, 245, 249 and barrier layers 243, 247, 251which form the interconnect are the same materials as the metal layers225, 229, 233 and barrier layers 227, 231, 235 which form the crack stopstructure at the same level in preferred embodiments of the invention.However, the interconnect structure lacks the high modulus liners. Thesubstrate 201, capping layers 203, 207, 211 and inter-layer dielectric(ILD) layers 205, 209, 213 complete the structure.

In embodiments of the invention, the high modulus liner could be aninsulating material such as SiC, Si3N4 or SiO2. In other embodiments,the high modulus layer can be a metal or a metallic layer. For theembodiments where the high modulus liner is a metallic material, some ofthe materials which can be used are W, Ta, Ti, Ru, Rh, Co and/or theirnitrides, oxides and alloys. Where the high modulus liner is a metal, inpreferred embodiments, the high modulus liner is much thicker than thebarrier layers in the crack stop structure or interconnect structure.

In embodiments of the invention, the high modulus liner is a singlematerial layer. In other embodiments, the high modulus liner containsmultiple material layers. Depending on the technology used for themetallurgy and other factors, the high modulus liner has a thicknessrange between 5 Angstroms and 100 nm. In embodiments of the invention inwhich a metallic high modulus layer is used, it is 50% (or more) thickerthan the regular barrier liner total thickness in the device area, e.g.,layer 252 in FIG. 3.

The invention finds particular application, as compared to the prior artprocess, where an advanced technology requires a minimal metalbarrier/liner for a resistance-capacitance (RC) requirement for theinterconnection metallurgy.

Ideally, the high modulus liner material is chosen for a high adhesionproperty with the ILD layer, the capping layer and the metal layer. Forexample, nitride materials generally have better adhesion properties ascompared to the pure metal, TaN vs. Ta. As the electrical connectivityeither in-plane or out-of-plane is irrelevant for the crack stopstructure, by the inclusion of an additional high modulus layer, theinventors realized the opportunity to improve the crack stop structuretoughness by using the appropriate dielectric or metal material isavailable for the inventive structure if a new layer is introduced inthe crack stop structure.

Although only three levels of the crack stop structure and metallurgystructure are shown for ease in illustration, in an actual device, theremay be more or fewer levels. In the invention, the number of levels ofthe crack stop structure and the metallurgy structure are equal. Byhaving an equal number of levels, many of the process steps can beshared between forming the crack stop and interconnections. Also, thehigh modulus layer and its thickness in a respective level can beselected according to the interconnect structure in the level, e.g.,what dielectric is used in the level.

In embodiments of the invention, the structure of the crack stopstructure parallels that of the interconnect structure. That is, wherethere is a metal line in the interconnect, a metal line is present inthe crack stop, where there is a via in the interconnect, there is a viain the crack stop structure.

A process for creating the crack stop structure and interconnection isdescribed below with reference to FIGS. 4-7.

FIG. 4 is a cross-sectional diagram depicting a crack stop structuretogether with a simplified metal interconnect structure after apatterning etch step has been performed on a top insulator layeraccording to a first embodiment of the invention. In the followingdescription, only the processes used for fabricating the final level ofthe crack stop and metallurgy structures are described. In preferredembodiments of the invention, the process for the first and secondlevels are very similar.

At this point in the process, the first and second levels of the crackstop structure and the interconnection metallurgy structure are alreadyfabricated. First and second capping layers 203, 207 separate the firstand second dielectric layers 205, 209. The first layer of the crack stopstructure is comprised of first level metal 225, high modulus layer 226and barrier layer 227; the second layer of the crack stop structure iscomprised of second level metal 229, high modulus layer 232 and barrierlayer 231. The first level of the interconnection structure is comprisedof first level metal 241 and barrier layer 243 and the second level ofthe interconnection is comprised of the second level metal 245 and thebarrier layer 247. In preferred embodiments, the metal and barriermaterials, when used, are the same on a given level as compared betweenthe crack stop and metallurgy on that level. As will be discussed later,in some embodiments of the invention, the metal and barrier material maynot be used in a given level of the crack stop. The metal and barriermaterials can be the same throughout different levels of the structuresor different between levels. Typically, the levels have respective totalthicknesses from 50 nm to 800 nm with a total thickness from 80 nm to500 nm being more preferred, but this is largely dependent on theinterconnection technology used.

In preferred embodiments, the dielectric material 213 is made of a low-Kdielectric such as porous SiO2 and porous Si (C, O, H) and is disposedon capping layer 211. In some embodiments, the dielectric material 213may be composed of a single dielectric material. In other embodiments,the dielectric material 213 may be composed of at least two differentdielectric materials. As is known, to form such a pattern in adielectric, a photoresist or sacrificial mandrel layer is firstpatterned over a dielectric layer. A subsequent etch, e.g., a reactiveion etch (RIE) process, creates the dielectric structure depicted inFIG. 4, leaving recess 255 for the crack stop feature and recess 257 forthe metallurgy. As depicted, a dual damascene process is used wherein ametal line and via are formed in a single deposition; the largercross-section areas above are the metal lines and the smaller crosssection areas below are the vias.

FIG. 5 is a cross-sectional diagram depicting the crack stop structuretogether with a simplified metal interconnect structure after a blockout mask deposition step and a high modulus material deposition stephave been performed according to a first embodiment of the invention.The block out mask 259 is preferably comprised of a photoresist materialin preferred embodiments of the invention. In other embodiments, theblock out mask 259 is a hard mask comprised of a silicon containingmaterial which is more robust than photoresist. Other hard maskmaterials such as silicon nitride or titanium nitride can be used. Thesematerials and the deposition processes used to fabricate them are wellknown in the art. The block out mask 259 is patterned so that theinterconnecting metallurgy structure is protected while the crack stopstructure is exposed. Next, a high modulus layer 234 is deposited in thecrack stop recess.

In preferred embodiments of the invention, the process of creating thecrack stop structure is “compatible” with the process for creating theinterconnect structure. That is, the process steps and materials areshared as much as possible, consistent with the goal of creating a morerobust crack stop structure. For example, in embodiments of theinvention, it is preferred that the high modulus layer is depositedbefore the barrier layer, as having a single block out mask rather thantwo block out masks is more efficient. For example, if the high moduluslayer was deposited after the barrier layer, two block out masks wouldbe needed. As mentioned elsewhere, in some embodiments, high moduluslayer is deposited in the entirety of the recess. However, where thehigh modulus layer only fills a portion of the recess, some of therecess is filled with the barrier layer and/or metal used in theinterconnect structure.

In some embodiments of the invention, a single high modulus layer 234 isdeposited. For example, a layer of insulating material such as SiC,Si3N4, or SiO2 can be deposited using known (or developed in the future)processes. Depending on the material, different deposition technologiesare used in respective embodiments. For example, a SiC or Si3N4 layer isdeposited using a chemical vapor deposition (CVD) process such as a lowpressure chemical vapor deposition (LPCVD) or a plasma enhanced chemicalvapor deposition (PECVD) process in embodiments of the invention. Wherea single layer of high modulus material is deposited, the layer 234 hasa thickness from 1 nm to 400 nm with a thickness from 3 nm to 100 nmbeing more preferred. The deposition of the high modulus layer is aconformal deposition in some embodiments of the invention, but notrequired. Other types of deposition processes which can be used todeposit the high modulus layer include physical vapor deposition (PVD)and atomic layer deposition (ALD).

FIG. 6 is a cross-sectional diagram depicting the crack stop structuretogether with a simplified metal interconnect structure after a barrierlayer has been formed according to a first embodiment of the invention.In this diagram, the block out mask has been removed. The technologyused to remove the mask will depend on the material used for the blockmask and that used for the high modulus layer. The removal of the blockout mask can be accomplished by any one or more of the various materialremoval or polishing techniques now known or later developed, includinglift-off, etching and chemical mechanical polishing techniques.

After the block out mask is removed, the barrier layer 261 is depositedin both the crack stop structure recess 255 and the interconnect recess257. In the crack stop recess, the barrier layer 261 is deposited overthe high modulus layer 234. In preferred embodiments of the invention, abarrier or liner layer 261 is selected according to the preferredinterconnect structure. Typical barrier layers include materials fromthe group of Ta, Ti, W, their nitrides or a combination thereof Inembodiments of the invention, the barrier layer 261 is depositedutilizing a conventional (or developed in the future) deposition processincluding, for example, chemical vapor deposition (CVD), plasma enhancedchemical vapor deposition (PECVD), physical vapor deposition (PVD) orsputtering. The thickness of the layer 261 can vary according to thetype of layer being formed and the technique used in forming the same.Typically, the barrier layer 261 has a thickness from 1 nm to 100 nmwith a thickness from 2 nm to 50 nm being more typical. Within the metalinterconnect, the liner material 261 prevents the diffusion of thesubsequent metal layer into the dielectric 213. Ideally, thecharacteristics are selected so that it may also act as an adhesionpromoting layer so that the layers of the structure are bonded together.

FIG. 7 is a cross-sectional diagram depicting the crack stop structuretogether with a simplified metal interconnect structure after thecontact metallurgy has been formed according to a first embodiment ofthe invention. This drawing represents the structure after two processsteps, a metal deposition step and a planarization step.

While many alternative metals and metal alloys can be used in theinterconnecting metallurgy, a typical metal used in a first embodimentof the invention is copper or a copper alloy. A copper deposition stephas can be utilizing a conventional deposition process including, forexample, chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), physical vapor deposition (PVD), sputtering,plating, chemical solution deposition, electroless plating, orcombination of the same. The thickness of the copper layer can varydepending on the depth of the trench and the technique used in formingthe copper layer. Typically, the copper layer has an overburdenthickness from 100 nm to 1000 nm, with a thickness from 300 nm to 800 nmbeing more typical.

The metal deposition step is followed by a planarization process such asa chemical mechanical polishing (CMP) step according to a firstembodiment of the invention. Typically, a CMP process uses an abrasiveand corrosive chemical slurry (commonly a colloid) in conjunction with apolishing pad. The pad and wafer are pressed together by a dynamicpolishing head and held in place by a plastic retaining ring. As shown,the CMP step has removed the excess portions (in the field areas) of thehigh modulus layer 234, the barrier/liner layer 261 (forming respectivebarrier layers 235, 252 in the crack stop and interconnect structures)and the metal layer (forming respective metal structures 233, 249 in thecrack stop and interconnect structures). The field areas of thedielectric layer 213 are those areas outside the etched features of thepattern in the dielectric. Other planarization processes are known tothe art and are used in alternative embodiments of the invention.

As is known to the art, the metallization layer is followed byadditional processing to fabricate contacts for structures which attachthe chip to a packaging substrate so that the chip can be incorporatedinto a computing device. After completing the integrated circuits in thewafer, the wafer is diced and the individual chips are placed on theirrespective substrates.

In embodiments of the invention, a high modulus liner is incorporatedwithin a crack stop structure. While the crack stop structure sharesmany of the same layers of the accompanying interconnecting metallurgy,the high modulus liner is not in the interconnects, but only, at leastas a separate layer, within the crack stop structure. In embodiments ofthe invention, the high modulus liner is an insulator, such as SiN, SiC,or SiO2 or combination of the same. In other embodiments, the highmodulus liner is a metallic material, such as W, Ta, Ti, Ru, Rh, Coand/or their nitrides, oxides and alloys. In those embodiments in whichthe high modulus layer is a metallic material, it is usually a differentmetal than that used as the main conductor of the interconnectstructure. In the embodiment above, the high modulus liner is a singlematerial layer, however, in other embodiments, the high modulus linercontains multiple material layers. Embodiments of the invention usemultiple layers to tailor the physical characteristics of the highmodulus layer as well as to provide better process windows andengineering control. Depending on the metal interconnect structure whichthe crack stop structure is designed to protect, the high modulus linerhas a thickness range between 5 Angstroms and 100 nm.

FIG. 8 is a cross-sectional diagram depicting a crack stop structuretogether with a simplified metal interconnect structure according to asecond embodiment of the invention. As compared to the first embodiment,each level of the crack stop structure has a relatively thicker layer ofthe high modulus material 271, 273 and 275. As recognized by theinventors, the crack stop structure need not be electrically functional,so in those embodiments in which a dielectric material is used as thehigh modulus layer, a greater relative amount of dielectric can be usedas compared to the interconnect structure it protects. Given a range of1 nm to 400 nm in thickness of the high modulus layer for the firstembodiment, in the second embodiment, the thickness of the high moduluslayer could range from 3 nm to 100 nm in thickness.

In embodiments of the invention, such as the first embodiment discussedabove, the thickness of the high modulus material layer is comparable tothe barrier layer thickness. In other embodiments, such as the secondembodiment, the thickness of the high modulus material is at least twiceof the barrier layer. Given the properties of the low-k material, e.g.,if the low-k is more porous, and therefore, has a weaker mechanicalproperty, thicker layers of the high modulus layer may be required toprotect the interconnect region. In the second embodiment, a singlelayer or multiple layers of the same or different materials are used inthe thicker high modulus layer in different variations of the secondembodiment.

FIG. 9 is a cross-sectional diagram depicting a crack stop structuretogether with a simplified metal interconnect structure after an etchstep has been performed on a top insulator layer according to a thirdembodiment of the invention. In this drawing, a thicker high moduluslayer 275 in the top level is shown relative to the high modulus layers226, 232 in other levels. This drawing is used to illustrate that thethickness of the high modulus layers can be different in differentlevels to accommodate process differences in each of the levels.Further, a better mechanical property on the top level from a thickerhigh modulus layer is desirable in some embodiments to offset thegreater forces at the top level due to the dicing process. In additionto thicker layers of the high modulus material in respective levels ofthe crack stop structure, different materials can be used for the highmodulus layers in respective levels of the crack stop structure.Different dielectrics could be used in different levels and the highmodulus materials can be adjusted accordingly. In variations of thethird embodiment, some or all of the levels of the crack stop structurewill have their own selected high modulus material and their ownthickness, that is, more than one level will vary from any other levelof the crack stop structure.

FIGS. 10-14 depict a process for fabricating a fourth embodiment of theinvention wherein the high modulus layer is used to fill the entirecrack stop recess in a respective level.

FIG. 10 is a cross-sectional diagram depicting the crack stop structuretogether with a simplified metal interconnect structure after block outmask deposition and high modulus material deposition steps have beenperformed according to a fourth embodiment of the invention. Thisdrawing represents a similar point in the process as FIG. 5 above,however, in this embodiment, the high modulus layer 281 fills the entirecrack stop recess.

The block out mask 259 prevents deposition of the high modulus layer inthe recess 257 for the interconnect structure. As in the embodimentsabove, the high modulus layer 281 may be comprised of a single layer orcould be a plurality of layers. There are variations of this embodimentwhere the high modulus layer completely fills the entire recess asshown. In other variations, there is a center void in the high moduluslayer. The high modulus materials previously discussed in reference toother embodiments can be used in this embodiment. Different depositiontechnologies are used in respective embodiments. For example, a chemicalvapor deposition (CVD) process such as a low pressure chemical vapordeposition (LPCVD) or a plasma enhanced chemical vapor deposition(PECVD) process are used in some embodiments.

FIG. 11 is a cross-sectional diagram depicting the crack stop structuretogether with a simplified metal interconnect structure after a barrierlayer has been formed according to a fourth embodiment of the invention.The block out mask has been removed using an appropriate removaltechnology depending on its composition as discussed above. Next, abarrier/liner layer 283 is deposited. Because the entire crack stoprecess has been filled with the high modulus layer 281, the barrierlayer 283 is only deposited in the interconnect recess 257.

FIG. 12 is a cross-sectional diagram depicting the depicting the crackstop structure together with a simplified metal interconnect structureafter the contact metallurgy has been formed according to a fourthembodiment of the invention. Because the entire crack stop recess hasbeen filled with the high modulus layer 281, the metal layer 249 is onlydeposited in the volume of the interconnect recess which is not alreadyoccupied by the barrier layer 283.

FIG. 13 is a cross-sectional diagram depicting the depicting the crackstop structure together with a simplified metal interconnect structureafter a planarization step has been performed according to the fourthembodiment of the invention. In variations of the fourth embodiment,more than one or all of the levels of the crack stop structure will befully filled by the high modulus layer.

Although the figures show only three levels for ease in illustration, inan actual device there can be more levels of the interconnectionstructure and hence in the crack stop structure. Further, although thedrawings show the third, upper level as differing and having a thickerhigh modulus layer as compared to the lower levels, each of the levelsmay have a respective thickness of the high modulus layer. For example,the lower level of the crack stop structure may have a thicker highmodulus layer if the low-k dielectric of the lowel device level wasespecially brittle, or if the dimensions of the interconnection wiringwas especially small. Lower k (and lower, weaker modulus) dielectricmaterials are often in lower levels of the interconnect structure.

In embodiments of the invention, the high modulus liner is added to thecrack stop structure, but not to the interconnection structures of theactive device. In many of the embodiments, some of the materials andprocesses are shared between the crack stop and interconnectionstructures at least on some of the levels. Traditional high modulusdielectric materials such as silicon dioxide, or metallic materials oreven esoteric materials which have good mechanical, but poor electricalproperties could be used. Esoteric materials not normally used insemiconductor processing such as vanadium oxide can be used as the highmodulus material in the crack stop structure. The physical properties ofvanadium oxide and similar materials change with temperature. Depositiontechniques such as PVD, CVD, ALD, spin-on deposition can be used todeposit these materials.

Where the high modulus layer is an insulator, the conductive metalportions of the crack stop are not continuous from the top of themetallization to the bottom as is the case in the interconnectionstructure and in the prior art crack stop structure.

In embodiments of the invention, the high modulus liner thickness andmaterial used varies on respective levels of the crack stop structure.The variation between the different levels can be tuned according to theparticular low-k material used on that level of the chip where differentlow-k materials are used on different levels of the chip. For example, athicker high modulus liner would be used on levels of the chip whichhave a very low modulus. Alternatively, the overall mechanicalcharacteristics of the crack stop can be adjusted by changing the highmodulus layer in respective levels. In this way, the thickness of thehigh modulus liner can be tuned to the characteristics of the respectivechip level. In some embodiments, one of the levels of the chip could usea high modulus dielectric for the entire crack stop layer in which caseno high modulus barrier liner would be needed.

In yet other embodiments, the high modulus liner is made up of multiplematerial layers. This embodiment also would lend itself to tuning thelayers or number of layers of the high modulus liner according to themodulus of the dielectric in the particular level. Multiple layers canbe selected for their mechanical properties, e.g., adhesion with othermaterials in the crack stop structure or the dielectric.

In yet other embodiments, not all of the crack stop levels have a highmodulus layer. As mentioned above, the dielectric layers which make upthe interconnect structure and the crack stop structure may bedifferent; some of the dielectric layers could be low-k porousdielectric layers and other layers could be high modulus dielectriclayers. Where the ILD itself is a high modulus material, the respectivecrack stop structure level may lack the high modulus layer in interestsof process simplification. In this case, the crack stop structure wouldhave some levels with a high modulus layer and some levels without ahigh modulus layer which would mirror those of the interconnectstructure on that level.

In some embodiments, the brittle, low-k dielectric is at a lower levelof the interconnect structure because of the product design. Productsoperating at higher temperature are sensitive to this layouts because ofmore thermal expansion related impacts. In these embodiments, a morerobust, e.g., thicker, high modulus layer could be used in the lowerlevel. In this way, the high modulus layer is tailored or matched to thedielectric used in the level.

The resulting structure can be included within integrated circuit chips,which can be distributed by the fabricator in wafer form (that is, as asingle wafer that has multiple chips), as a bare die, or in a packagedform. In any case, the chip is then integrated with other chips,discrete circuit elements, and/or other signal processing devices aspart of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

While only one or a limited number of features are illustrated in thedrawings, those ordinarily skilled in the art would understand that manydifferent types of features could be simultaneously formed with theembodiment herein and the drawings are intended to show simultaneousformation of multiple different types of features. However, the drawingshave been simplified to only show a limited number of features forclarity and to allow the reader to more easily recognize the differentfeatures illustrated. This is not intended to limit the inventionbecause, as would be understood by those ordinarily skilled in the art,the invention is applicable to structures that include many of each typeof feature shown in the drawings.

While the above describes a particular order of operations performed bycertain embodiments of the invention, it should be understood that suchorder is exemplary, as alternative embodiments may perform theoperations in a different order, combine certain operations, overlapcertain operations, or the like. References in the specification to agiven embodiment indicate that the embodiment described may include aparticular feature, structure, or characteristic, but every embodimentmay not necessarily include the particular feature, structure, orcharacteristic.

In addition, terms such as “right”, “left”, “vertical”, “horizontal”,“top”, “bottom”, “upper”, “lower”, “under”, “below”, “underlying”,“over”, “overlying”, “parallel”, “perpendicular”, etc., used herein areunderstood to be relative locations as they are oriented and illustratedin the drawings (unless otherwise indicated). Terms such as “touching”,“on”, “in direct contact”, “abutting”, “directly adjacent to”, etc.,mean that at least one element physically contacts another element(without other elements separating the described elements).

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the invention. Theembodiment was chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

Having described our invention, what we now claim is as follows:

11. A method for creating an integrated circuit (IC) structurecomprising: providing an interconnection structure comprised of aplurality of levels, each of the interconnect structure levels includingan interlayer dielectric (ILD) layer, a barrier layer disposed over theILD and a conductor metal layer over the barrier layer and a crack stopstructure laterally adjacent to and having an equal plurality of levelsas the interconnect structure; in a first level of the interconnectionstructure and the crack stop structure, providing an interconnectionrecess and a crack stop recess in the ILD layer for the first level;forming a block out mask over the interconnection recess to preventdeposition of the high modulus layer in the interconnection recess;filling at least a portion of the crack stop recess with a high moduluslayer; removing the block out mask; and filling at least a portion ofthe interconnection recess with a barrier layer and a conductive metallayer.
 12. The method as recited in claim 11, further comprisingdepositing the barrier layer on the high modulus layer in the crack stoprecess.
 13. The method as recited in claim 12, further comprisingdepositing the conductive metal layer on the barrier layer in the crackstop recess.
 14. (canceled)
 15. The method as recited in claim 11,wherein the high modulus layer is an insulator.
 16. The method asrecited in claim 11, wherein the high modulus liner is a metallicmaterial.
 17. The method as recited in claim 11, wherein the highmodulus layer is a single material layer.
 18. The method as recited inclaim 11, wherein the high modulus layer contains multiple materiallayers.
 19. The method as recited in claim 11, wherein the high moduluslayer has a thickness equal to a cumulative thickness of the barrierlayer and the conductor metal layer in the interconnect structure. 20.The method as recited in claim 19, wherein the high modulus layer in thefirst level has a void.
 21. A method for creating an integrated circuit(IC) structure comprising: providing an interconnection structurecomprised of a plurality of levels, each of the interconnect structurelevels including an interlayer dielectric (ILD) layer, a barrier layerdisposed over the ILD and a conductor metal layer over the barrier layerand a crack stop structure laterally adjacent to and having an equalplurality of levels as the interconnect structure; in a first level ofthe interconnection structure and the crack stop structure, providing aninterconnection recess and a crack stop recess in the ILD layer for thefirst level; filling at least a portion of the crack stop recess with ahigh modulus layer; and filling at least a portion of theinterconnection recess with a barrier layer and a conductive metallayer:, wherein the high modulus layer has a thickness equal to acumulative thickness of the barrier layer and the conductor metal layerin the interconnect structure.
 22. The method as recited in claim 21,further comprising depositing the barrier layer on the high moduluslayer in the crack stop recess.
 23. The method as recited in claim 22,further comprising depositing the conductive metal layer on the barrierlayer in the crack stop recess.
 24. The method as recited in claim 21,further comprising forming a block out mask over the interconnectionrecess prior to a deposition of the high modulus layer in the crack stoprecess to prevent deposition of the high modulus layer in theinterconnection recess.
 25. The method as recited in claim 21, whereinthe high modulus layer is an insulator.
 26. The method as recited inclaim 21, wherein the high modulus liner is a metallic material.
 27. Themethod as recited in claim 21, wherein the high modulus layer is asingle material layer.
 28. The method as recited in claim 21, whereinthe high modulus layer contains multiple material layers.
 29. The methodas recited in claim 21, wherein the high modulus layer in the firstlevel has a void.